| PART |
Description |
Maker |
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M366S1723DTS-L7C M366S1723DTS M366S1723DTS-C M366S |
PC133/PC100 Unbuffered DIMM PC133/PC100无缓冲DIMM
16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KMM366S823BTL |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512 MB的无缓冲内存的SODIMM 64 Mword4位，133/100 MHz内存总线银模块（162米部分）PC133/100 SDRAM内存
x64 SDRAM Module
|
Elpida Memory, Inc.
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| W3DG647V75D1 W3DG647V7D1 W3DG647V10D1 W3DG647V-D1 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
White Electronic Designs Corporation
|
